SEU tolerance improvement in 22 nm UTBB FDSOI SRAM based on a simple 8T hardened cell. (September 2019)

• Record Type: Journal Article
• Authors: Cai, C.; Zhao, P.X.; Xu, L.W.; Liu, T.Q.; Li, D.Q.; Ke, L.Y.; He, Z.; Liu, J.
• Is Part Of: Microelectronics and reliability. Volume 100/101(2019)
• Publication Date: 2019-09
• Subjects: UTBB FDSOI -- Radiation hardened -- 8T -- SRAM -- Single event upset; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2019.06.014
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: FDSOI technology has attracted considerable interests in space application due to its inherent high radiation resistance. An SEU hardened 8T SRAM cell is proposed and implemented in a test memory chip with advanced 22 nm UTBB FDSOI technology. Heavy ion experimental results show that the threshold LET of SEU for proposed 8T structure cell is up to ~24 MeV·cm 2 ·mg − 1 and less dependences of upset on data pattern and test modes are observed. Moreover, multiple bit upsets are not appeared in bitmap analysis results even under effective LET values at ~129 MeV·cm 2 ·mg − 1 . The Pbb body biasing shows low influence on SEU rates in irradiation test, while the Nbb body biasing has ability to adjust the SEU sensitivity in a certain range. The error rate prediction indicates that this nanoscale FDSOI hardened SRAM is suitable for space application in harsh radiation environment.