Rapid diagnosis of hot spot failure of crystalline silicon PV module based on I-V curve. (September 2019)

• Record Type: Journal Article
• Authors: Ma, Mingyao; Liu, Heng; Zhang, Zhixiang; Yun, Ping; Liu, Fang
• Is Part Of: Microelectronics and reliability. Volume 100/101(2019)
• Publication Date: 2019-09
• Subjects: Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2019.113402
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: Hot spot failure of PV modules has become one of the most important factors affecting the reliability of PV power generation systems. This study proposes a hot spot fault diagnosis method based on I-V curve of PV modules, which is based on distance calculation between scan points and lines formed by the points. By this method, various types of I-V curves can be quickly distinguished to diagnose hot spot faults. Finally, the diagnostic effect of the method was evaluated through a large number of PV power station field tests. Highlights: The types of hot spot modules were classified into three types based on the I-V curves. The mechanism of hot spot failure was studied and analyzed the causes of the characteristics of each types of I-V curves. This study proposes a new hot spot fault diagnosis method based on I-V curve of PV modules. The diagnostic effect of the proposed method were verified and analyzed the cause of the diagnosis error.