High-performance solution-processed ZnSnO metal–semiconductor–metal ultraviolet photodetectors via ultraviolet/ozone photo-annealing. (30th July 2021)

• Record Type: Journal Article
• Authors: Huang, Chun-Ying; Xiao, Lian-Kai; Chang, Yun-Hsiang; Chen, Liang-Yu; Chen, Guan-Ting; Li, Ming-Hsien
• Is Part Of: Semiconductor science and technology. Volume 36:Number 9(2021)
• Publication Date: 2021-07-30
• Subjects: UV photodetectors -- ZnSnO -- sol–gel -- ultraviolet/ozone -- photo-annealing; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/ac1565
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: In-free amorphous oxide semiconductors (AOS), such as ZnSnO (ZTO) are solution-processed for use in transistors and photodetectors (PDs). However, the device performance is much lower than that for a device that uses an In-based AOS (e.g. a-InGaZnO). This study determines the effect of ultraviolet (UV)/ozone (O3 ) optical-annealing treatment on In-free amorphous ZnSnO (ZTO) metal–semiconductor–metal PDs using a sol–gel method. UV/O3 optical-annealing for ZTO gel films allows the condensation process to be completed because organic- and hydrogen-based elements are fully decomposed, so the PDs have a relatively high responsivity of 11.3 A W −1, an ultra-high photo-to-dark current ratio of 2090 and an improved response speed, with a decay time of 3.02 s. This work uses the UV/O3 technique for AOS-based UV PDs and shows the potential for developing In-free AOS for other electronic and optoelectronic devices.