Simulation study of Fermi level depinning in metal-MoS2 contacts. (October 2021)

• Record Type: Journal Article
• Authors: Khakbaz, P.; Driussi, F.; Giannozzi, P.; Gambi, A.; Esseni, D.
• Is Part Of: Solid-state electronics. Volume 184(2021)
• Publication Date: 2021-10
• Subjects: 2-D materials -- MoS2 -- Fermi level de-pining -- Interface states -- Contact resistance; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2021.108039
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: Interface states in metal-MoS2 are presumably reason for the Fermi Level pinning. The Fermi level de-pinning could be attained by controlling the distance. With buffer layers and the use of back gate, the Schottky height can be zeroed. Abstract: We used Density Functional Theory (DFT) to study the Fermi level pinning and Schottky barrier height in metal-MoS2 contacts. We showed that the Fermi level de-pinning could be attained by controlling the distance between the metal and MoS2 . In particular, with proper buffer layers and the use of back-gated structures, the Schottky barrier height can be practically zeroed in some metal-MoS2 stacks, which is important to attain Ohmic contacts.