Quantum capacitance transient phenomena in high-k dielectric armchair graphene nanoribbon field-effect transistor model. (October 2021)

• Record Type: Journal Article
• Authors: Avnon, Asaf; Golman, Roman; Garzón, Esteban; Ngo, Ha-Duong; Lanuzza, Marco; Teman, Adam
• Is Part Of: Solid-state electronics. Volume 184(2021)
• Publication Date: 2021-10
• Subjects: Armchair graphene nanoribbon field effect transistor (AGNRFET) -- Graphene -- Low Power -- High-k dielectric -- 2D materials -- Quantum capacitance -- Tunnel FETs; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2021.108060
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: Quantum capacitance becomes dominant with high-k ultra-thin dielectrics. Quantum capacitance in Nanoribbons is influenced by Van-Hove singularities. The transient mode in an armchair graphene nanoribbon field-effect transistor results in undulations. An extended Verilog-A model was built to include the quantum capacitance influence. Abstract: Graphene Nanoribbons (GNRs) are an emerging candidate to challenge the place of current semiconductor-based technology. In this work, we extend a model for Armchair Graphene Nanoribbons Field-Effect Transistor (AGNRFET) to the high-k dielectrics realm and examine the influences of quantum capacitance on its transient phenomena. The model is coded with Verilog-A and evaluated through SPICE simulations. We have considered a comparison between the extended model with and without the influence of the quantum capacitance. Simulation results show a realistic scenario where influence of the quantum capacitance significantly impacts the transient behaviour in circuit design. This proves the proposed model to be a valuable aid for the circuit design of future graphene-based applications.