Short term reliability and robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs. (August 2021)

• Record Type: Journal Article
• Authors: Gao, ZHan; Meneghini, Matteo; Harrouche, Kathia; Kabouche, Riad; Chiocchetta, Francesca; Okada, Etienne; Rampazzo, Fabiana; De Santi, Carlo; Medjdoub, Farid; Meneghesso, Gaudenzio; Zanoni, Enrico
• Is Part Of: Microelectronics and reliability. Volume 123(2021)
• Publication Date: 2021-08
• Subjects: AlN/GaN HEMTs -- Reliability -- Stress -- Breakdown mechanism -- Electric field; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2021.114199
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: Short-term reliability and robustness of 110 nm AlN/GaN HEMTs has been evaluated by means of off-state, semi-on state and on-state step stress tests on devices having different gate-drain distance, LGD . While breakdown voltages and critical voltages scale almost linearly with LGD, failure mode remains almost unchanged in all tested devices, and consists in an increase of gate leakage, accompanied by a positive shift of threshold voltage. In off-state, electroluminescence images detect the presence of localized leakage paths which may act as preferential paths for electron trapping. Degradation does not depend on dissipated power and is preliminary attributed to hot-electron trapping, enhanced by electric fields.