Structure and luminescence properties of Eu3+ and Dy3+ implanted GaN films. (August 2021)

• Record Type: Journal Article
• Authors: Ma, Hai; Wang, Xiaodan; Chen, Jiafan; Gao, Xiaodong; Zheng, Shunan; Mao, Hongmin; Wang, Dan; Zeng, Xionghui; Xu, Ke
• Is Part Of: Superlattices and microstructures. Volume 156(2021)
• Publication Date: 2021-08
• Subjects: Gallium nitride -- Europium -- Dysprosium -- Luminescence -- Energy transfer; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2021.106974
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: X-Ray diffraction (XRD), Raman scattering, Cathodoluminescence measurements (CL) and Photoluminescence (PL) were employed to characterize the structure and optical properties of Dysprosium (Dy) and Europium (Eu) implanted GaN films grown by MOCVD. For GaN: Dy 3+ samples, Dy 3+ implantation leads to strain and radiation damage increasing with Dy 3+ implanted fluence. From the CL spectra, the characteristic transitions from the excited 4 F9/2 level of Dy 3+ to 6 H15/2 (485 nm), 6 H13/2 (583 nm) and 6 H11/2 (671 nm) were observed. For Dy 3+ and Eu 3+ co-doped GaN, considering the doping effects of Dy 3+, we proposed that there might exist a resonance energy transfer process from Eu 3+ ions 7 F0 → 5 D2 to Dy 3+ ions 4 F9/2 → 6 H15/2, which is dominated by the electric dipole-dipole interaction. Highlights: Eu 3+, Dy 3+ co-implanted GaN crystalline thin films were prepared for the first time. Energy transfer processes between Eu 3+ and Dy 3+ were proposed. Dy implantation leads to strain and radiation damage increasing with Dy dose.