Donor implanted back-gates in GaAs for MBE-grown highest mobility two-dimensional electron systems. (9th July 2021)

• Record Type: Journal Article
• Authors: Scharnetzky, J; Baumann, P; Reichl, C; Karl, H; Dietsche, W; Wegscheider, W
• Is Part Of: Semiconductor science and technology. Volume 36:Number 8(2021)
• Publication Date: 2021-07-09
• Subjects: ion implantation -- molecular beam epitaxy -- back-gates; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/ac0d9a
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: Three different elements, silicon, selenium, and tellurium, are ion-implanted in gallium arsenide to form a conducting layer that serves as a back-gate to a molecular beam epitaxy overgrown two-dimensional electron gas. While the heavy ion tellurium creates too many defects in the gallium arsenide to form a conducting layer, both silicon and selenium show promising results combined with MBE-grown high-quality 2DEGs. Similar 2DEG mobilities compared to non-implanted reference samples are achieved for both silicon and selenium implanted structures. Individual contacts to the back-gate are challenging. However, silicon implanted structures, annealed before the MBE growth, result in a functional back-gate, and the electron density of the 2DEG can be tuned via the structured back-gate.