Cite
HARVARD Citation
Sung, J. et al. (2021). Retention enhancement through capacitance-dependent voltage division analysis in 3D stackable TaOx/HfO2-based selectorless memristor. Materials & design. p. . [Online].
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Sung, J. et al. (2021). Retention enhancement through capacitance-dependent voltage division analysis in 3D stackable TaOx/HfO2-based selectorless memristor. Materials & design. p. . [Online].