New challenges of printed high-к oxide dielectrics. (September 2021)

• Record Type: Journal Article
• Authors: Carlos, E.; Branquinho, R.; Martins, R.; Fortunato, E.
• Is Part Of: Solid-state electronics. Volume 183(2021)
• Publication Date: 2021-09
• Subjects: Solution-processed -- High-к oxide dielectrics -- Thin film devices -- Printed electronics -- Large-scale manufacturing -- Scale-up challenges; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2021.108044
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: Challenges to transfer from traditional coating to printing techniques. Printed high-к oxide dielectrics. A new era for sustainable flexible electronics. Abstract: High-permittivity (к) oxide dielectrics have been widely demanded concerning the Internet of Things (IoT) requirements, such as flexible large-area manufacturing, energy efficiency, low-cost processes, and sustainable electronics, especially in thin-film transistors (TFTs). From there emerged the necessity of printing energy-efficient (vacuum-free) eco-devices using low-temperature methods (e.g., combustion synthesis, post-treatments) in the production and processing of nanomaterials, thus reducing the human carbon footprint. However, currently the main deposition method used is typically spin-coating which requires higher temperatures and long annealing times, not compatible with the printing industry. Besides the concerns with process integration, the market highly demands high-к dielectrics with great stability and high yield. To surpass these challenges, some crucial parameters in the ink design need to be considered to guarantee successful upscale for large-area electronics manufacturing.