Optimization of post-deposition annealing temperature for improved signal-to-noise ratio in In2O3 gas sensor. (2nd June 2021)

• Record Type: Journal Article
• Authors: Shin, Wonjun; Hong, Seongbin; Jeong, Yujeong; Jung, Gyuweon; Park, Jinwoo; Kim, Donghee; Park, Byung-Gook; Lee, Jong-Ho
• Is Part Of: Semiconductor science and technology. Volume 36:Number 7(2021)
• Publication Date: 2021-06-02
• Subjects: gas sensor -- low-frequency noise -- annealing -- signal-to-noise ratio; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/abf906
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: This paper investigates the effects of post-deposition annealing (PDA) temperature on H2 S gas sensing and low-frequency noise characteristics of In2 O3 gas sensors. In2 O3 thin-films are deposited using the radio frequency (RF) sputtering method at an RF power of 150 W and post-annealed at various temperatures (200, 300, and 400 °C). The response of the In2 O3 gas sensor to H2 S decreases with increasing PDA temperature due to the increase of grain size. However, the In2 O3 post-annealed at 200 °C shows the largest 1/ f noise since the damaged sensing material-substrate interface is not fully recovered by the PDA. The sensors post-annealed at a higher temperature (300 °C and 400 °C) recover the damaged interface. Thanks to its moderate response and noise level, the sensor post-annealed at 300 °C shows the largest signal-to-noise ratio.