Dynamic characteristics of InGaAs/InP multiple quantum well discrete mode laser diodes emitting at 2 μm. Issue 13 (1st June 2014)

• Record Type: Journal Article
• Authors: O'Carroll, J.; Byrne, D.; Kelly, B.; Phelan, R.; Gunning, F.C.G.; Anandarajah, P.M.; Barry, L.P.
• Is Part Of: Electronics letters. Volume 50:Issue 13(2014)
• Page Start: 948
• Page End: 950
• Publication Date: 2014-06-01
• Subjects: indium compounds -- gallium arsenide -- III‐V semiconductors -- quantum well lasers -- laser modes -- electro‐optical effects -- laser beams; dynamic characteristics -- multiple quantum well discrete mode laser diodes -- electro‐optical bandwidth -- direct modulation -- gain switched performance -- wavelength 2 mum -- InGaAs‐InP; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2013.3257
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : The dynamic characteristics of a discrete mode laser diode fabricated in the InGaAs/InP multiple quantum well material system and emitting single mode at λ ≃ 2.0 μm are reported. Results are presented on the electro‐optical bandwidth, direct modulation and gain switched performance.