Dynamic characteristics of InGaAs/InP multiple quantum well discrete mode laser diodes emitting at 2 μm. Issue 13 (1st June 2014) - O'Carroll, J.
Abstract : The dynamic characteristics of a discrete mode laser diode fabricated in the InGaAs/InP multiple quantum well material system and emitting single mode at λ ≃ 2.0 μm are reported. Results are presented on the electro‐optical bandwidth, direct modulation and gain switched performance.