Cite
MLA Citation
N. Kashio et al.. “InP/InGaAs double heterojunction bipolar transistors with BVCEO = 12 V and fmax = 470 GHz.” Electronics letters, vol. 51, no. 8, 2015, pp. 648–649. http://access.bl.uk/ark:/81055/vdc_100126834470.0x000055
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N. Kashio et al.. “InP/InGaAs double heterojunction bipolar transistors with BVCEO = 12 V and fmax = 470 GHz.” Electronics letters, vol. 51, no. 8, 2015, pp. 648–649. http://access.bl.uk/ark:/81055/vdc_100126834470.0x000055