Cite
HARVARD Citation
Kashio, N. et al. (2015). InP/InGaAs double heterojunction bipolar transistors with BVCEO = 12 V and fmax = 470 GHz. Electronics letters. 51 (8), pp. 648-649. [Online].
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Kashio, N. et al. (2015). InP/InGaAs double heterojunction bipolar transistors with BVCEO = 12 V and fmax = 470 GHz. Electronics letters. 51 (8), pp. 648-649. [Online].