Cite
HARVARD Citation
Xu, Z. et al. (2014). 300°C operation of normally‐off AlGaN/GaN MOSFET with low leakage current and high on/off current ratio. Electronics letters. 50 (4), pp. 315-316. [Online].
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Xu, Z. et al. (2014). 300°C operation of normally‐off AlGaN/GaN MOSFET with low leakage current and high on/off current ratio. Electronics letters. 50 (4), pp. 315-316. [Online].