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HARVARD Citation
Panda, D. et al. (2018). Compact thermal noise model for enhancement mode N‐polar GaN MOS‐HEMT including 2DEG density solution with two sub‐bands. IET circuits, devices & systems. 12 (6), pp. 810-816. [Online].
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Panda, D. et al. (2018). Compact thermal noise model for enhancement mode N‐polar GaN MOS‐HEMT including 2DEG density solution with two sub‐bands. IET circuits, devices & systems. 12 (6), pp. 810-816. [Online].