Compact thermal noise model for enhancement mode N‐polar GaN MOS‐HEMT including 2DEG density solution with two sub‐bands. Issue 6 (25th April 2018)

• Record Type: Journal Article
• Authors: Panda, Deepak Kumar; Lenka, Trupti Ranjan
• Is Part Of: IET circuits, devices & systems. Volume 12:Issue 6(2018)
• Page Start: 810
• Page End: 816
• Publication Date: 2018-04-25
• Subjects: thermal noise -- gallium compounds -- III-V semiconductors -- wide band gap semiconductors -- two-dimensional electron gas -- high electron mobility transistors -- MOSFET -- insulating materials -- dielectric materials -- zirconium compounds -- hafnium compounds -- current density -- surface potential -- Fermi level -- semiconductor quantum wells -- technology CAD (electronics) -- calibration -- semiconductor device noise; compact thermal noise model -- enhancement mode N-polar MOS-HEMT -- 2DEG density solution -- high electron mobility transistor -- double insulating layer -- high-k dielectrics -- gate length-based low noise enhancement mode N-polar double deck T-shaped gate -- maximum drain current density -- surface potential -- Fermi level -- triangular quantum well -- numerical method -- drain current -- intrinsic charge -- gate capacitance -- calibration -- TCAD device simulation -- noise figure 0.72 dB -- frequency 20 GHz -- GaN-ZrO2-HfO2; Electronic circuits -- Periodicals; Electronic systems -- Periodicals; 621.381505
• DOI: 10.1049/iet-cds.2017.0226
• Languages: English
• ISSNs: 1751-858X

Abstract

Abstract : A 135 nm gate length‐based low noise enhancement mode N‐polar double deck T‐shaped gate Gallium Nitride (GaN) Metal Oxide Semiconductor (MOS)‐high electron mobility transistor with double insulating layer of high‐ k dielectrics ZrO2 /HfO2 is proposed. The device exhibits maximum transconductance of 0.55 S/mm, maximum drain current density of 1.4 A/mm and minimum noise figure (NFmin ) of 0.72 dB at 20 GHz. A compact model for Two Dimensional Electron Gas (2DEG) density is developed by explicit solution of surface potential and Fermi level by considering first two sub‐bands of triangular quantum well without using any numerical methods. Based on the surface potential drain current, intrinsic charge, gate capacitance, small signal and thermal noise models are developed. To validate the proposed numerical model, the results are calibrated with TCAD device simulation results and available experimental data from literatures.