Cite
HARVARD Citation
Kashio, N. et al. (2014). 0.25 μm emitter InP/InAlGaAs/GaAsSb double heterojunction bipolar transistor with passivation ledge exhibiting a current gain of over 100. Electronics letters. 50 (22), pp. 1631-1633. [Online].
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Kashio, N. et al. (2014). 0.25 μm emitter InP/InAlGaAs/GaAsSb double heterojunction bipolar transistor with passivation ledge exhibiting a current gain of over 100. Electronics letters. 50 (22), pp. 1631-1633. [Online].