0.25 μm emitter InP/InAlGaAs/GaAsSb double heterojunction bipolar transistor with passivation ledge exhibiting a current gain of over 100. Issue 22 (1st October 2014)

• Record Type: Journal Article
• Authors: Kashio, N.; Kurishima, K.; Ida, M.; Matsuzaki, H.
• Is Part Of: Electronics letters. Volume 50:Issue 22(2014)
• Page Start: 1631
• Page End: 1633
• Publication Date: 2014-10-01
• Subjects: heterojunction bipolar transistors -- passivation -- etching -- semiconductor device breakdown -- III‐V semiconductors -- indium compounds -- aluminium compounds -- gallium arsenide; double heterojunction bipolar transistor -- DHBT -- passivation ledge -- composite emitter structure -- wet etching -- size 0.25 mum -- InP‐InAlGaAs‐GaAsSb; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2014.2774
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : A suitable emitter structure for the fabrication of InP/InAlGaAs/GaAsSb double heterojunction bipolar transistors (DHBTs) with a passivation ledge is reported. With a composite emitter structure consisting of an InP and thin InAlGaAs, a passivation ledge can be easily fabricated by wet etching. A high current gain of 117 is obtained even for a 0.25 μm emitter DHBT with a base sheet resistance of about 1100 Ω/sq. The fabricated HBT also exhibits an f max of more than 330 GHz while maintaining a breakdown voltage of more than 9 V.