Electrical transport properties of thermally stable n-ZnO/AlN/p-Si diode grown using RF sputtering. (15th June 2021)

• Record Type: Journal Article
• Authors: Gupta, Chandra Prakash; Singh, Amit Kumar; Jain, Praveen K.; Sharma, Shashi Kant; Birla, Shilpi; Sancheti, Sandeep
• Is Part Of: Materials science in semiconductor processing. Volume 128(2021)
• Publication Date: 2021-06-15
• Subjects: Electrical properties -- RF Sputtering -- ZnO -- Thermal stability; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2021.105734
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: The temperature dependent electrical transport properties of n-ZnO/AlN/p-Si heterojunction diode fabricated by RF sputtering system have been investigated over a wide temperature range of 303 K–413 K. The AlN buffer layer in-between ZnO and Si lowers the mismatch in thermal expansion coefficient/lattice constant for improved electrical and structural characteristics. XRD pattern and FESEM confirm the crystalline nature and good quality of ZnO thin film with uniform grain size and crack free structure respectively. As measured from the temperature dependent I–V curve, the apparent barrier height reduces as Ideality factor rises which shows good thermal stability within the temperature range studied here. The mean value of barrier height as well as the Richardson constant have been evaluated. Additionally, by taking into account the Gaussian distribution of inhomogeneous barrier heights, the modified Richardson constant has been estimated.