Cite
MLA Citation
Arkka Bhattacharyya et al.. “130 mA mm−1β-Ga2O3 metal semiconductor field effect transistor with low-temperature metalorganic vapor phase epitaxy-regrown ohmic contacts.” Applied physics express, vol. 14, 2021, p. . http://access.bl.uk/ark:/81055/vdc_100133614642.0x000008