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HARVARD Citation
Bhattacharyya, A. et al. (2021). 130 mA mm−1β-Ga2O3 metal semiconductor field effect transistor with low-temperature metalorganic vapor phase epitaxy-regrown ohmic contacts. Applied physics express. p. . [Online].
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Bhattacharyya, A. et al. (2021). 130 mA mm−1β-Ga2O3 metal semiconductor field effect transistor with low-temperature metalorganic vapor phase epitaxy-regrown ohmic contacts. Applied physics express. p. . [Online].