Degraded power MOSFET effects on Class-A power amplifier: Modelling studies considering feedback. (July 2021)

• Record Type: Journal Article
• Authors: Meydanci, Mehmet Akif; Özçelep, Yasin
• Is Part Of: Microelectronics and reliability. Volume 122(2021)
• Publication Date: 2021-07
• Subjects: Electrical stress -- Gate oxide degradation -- Power MOSFET -- Class-A power amplifier -- Degradation modelling -- Feedback; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2021.114164
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: The purpose of the study is proposing a gate oxide degraded MOSFET model that represents the degraded MOSFET effects on Class-A power amplifier parameters. The model includes electrical stress induced threshold voltage and transconductance parameter instabilities of transistor. The change in threshold voltage is between 3.2 V and -1 V; the change in transconductance parameter is between 0.4A/V 2 and 0.004A/V 2 . The circuit model is formed by using a voltage source at the gate terminal and a resistor at the source terminal of transistor. Simulations with the proposed model are performed and simulation results are compared experimental DC and AC measurements of Class-A amplifier with and without feedback resistor during stress. To improve the model, we also proposed a tuning circuit. Its seen that, the proposed model in the study is successful to simulate the stress induced change in gain, efficiency of Class-A power amplifier. Highlights: We proposed gate oxide degraded MOSFET model representing degraded MOSFET effects on Class-A power amplifier parameters. The model includes threshold voltage and transconductance instabilities of transistor. Stress induced change in gain and efficiency of Class-A power amplifier are successfully simulated using proposed model.