Cite
HARVARD Citation
Lawrowski, R. et al. (2014). Improvement of Homogeneity and Aspect Ratio of Silicon Tips for Field Emission by Reactive-Ion Etching. Advances in materials science and engineering. p. . [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Lawrowski, R. et al. (2014). Improvement of Homogeneity and Aspect Ratio of Silicon Tips for Field Emission by Reactive-Ion Etching. Advances in materials science and engineering. p. . [Online].