Cite
HARVARD Citation
Hussin, H. et al. (2014). Effects of Gate Stack Structural and Process Defectivity on High-k Dielectric Dependence of NBTI Reliability in 32 nm Technology Node PMOSFETs. TheScientificWorldjournal. p. . [Online].
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Hussin, H. et al. (2014). Effects of Gate Stack Structural and Process Defectivity on High-k Dielectric Dependence of NBTI Reliability in 32 nm Technology Node PMOSFETs. TheScientificWorldjournal. p. . [Online].