Modelling and kink correction of 0.18μm bulk CMOS at liquid helium temperature. Issue 14 (1st July 2019)

• Record Type: Journal Article
• Authors: Li, Zhen; Luo, Chao; Lu, Tengteng; Xu, Jun; Kong, Weicheng; Guo, Guoping
• Is Part Of: Electronics letters. Volume 55:Issue 14(2019)
• Page Start: 780
• Page End: 783
• Publication Date: 2019-07-01
• Subjects: CMOS integrated circuits -- cryogenic electronics -- integrated circuit modelling -- MOSFET circuits; compact model -- BSIM3V3 -- simple subcircuit -- kink effect -- bulk CMOS -- liquid helium temperature -- cryogenic characterisation -- CMOS technology -- length ratios -- bias conditions -- fundamental physical parameters -- P‐type MOS transistors -- N‐type MOS transistors -- voltage 1.8 V -- voltage 5.0 V -- size 0.18 mum -- temperature 300 K to 4.2 K; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2019.1099
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : Cryogenic characterisation and modelling of 0.18 μ m CMOS technology (1.8 and 5 V) is presented in this Letter. Several P‐type MOS and N‐type MOS transistors with different width to length ratios were extensively characterised under various bias conditions at temperatures ranging from 300 K down to 4.2 K. The authors extracted their fundamental physical parameters and developed a compact model based on BSIM3V3. A simple subcircuit was built to correct the kink effect. The RMS error of test results and modelling results is < 3%.