Cite
MLA Citation
Heng-Sheng Huang et al.. “I-V model of nano nMOSFETs incorporating drift and diffusion current.” Vacuum, vol. 155, 2018, pp. 76–82. http://access.bl.uk/ark:/81055/vdc_100084806068.0x000056
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Heng-Sheng Huang et al.. “I-V model of nano nMOSFETs incorporating drift and diffusion current.” Vacuum, vol. 155, 2018, pp. 76–82. http://access.bl.uk/ark:/81055/vdc_100084806068.0x000056