Cite
HARVARD Citation
Huang, H. et al. (2018). I-V model of nano nMOSFETs incorporating drift and diffusion current. Vacuum. pp. 76-82. [Online].
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Huang, H. et al. (2018). I-V model of nano nMOSFETs incorporating drift and diffusion current. Vacuum. pp. 76-82. [Online].