Silicon on insulator pressure sensor based on a thermostable electrode for high temperature applications. (1st October 2015)

• Record Type: Journal Article
• Authors: Liu, G.D.; Cui, W.P.; Hu, H.; Zhang, F.S.; Zhang, Y.X.; Gao, C.C.; Hao, Y.L.
• Is Part Of: Micro & nano letters. Volume 10:Number 10(2015)
• Page Start: 496
• Page End: 499
• Publication Date: 2015-10-01
• Subjects: silicon -- elemental semiconductors -- silicon‐on‐insulator -- pressure sensors -- electrodes -- titanium -- titanium compounds -- platinum -- gold -- ohmic contacts -- thermal stability -- transmission lines -- Auger electron spectra -- measurement errors -- calibration; silicon on insulator pressure sensor -- thermostable electrode -- high temperature applications -- thermal stability -- ohmic contacts -- linear transmission line method -- Auger electron spectroscopy -- calibration -- nonlinearity error -- sensitivity -- pressure 30 kPa to 150 kPa -- temperature 500 degC -- Ti‐TiN‐Pt‐Au -- Si; Nanotechnology -- Periodicals; Nanostructures -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1049/mnl.2015.0181
• Languages: English
• ISSNs: 1750-0443

Abstract

Abstract : A high temperature silicon on insulator pressure sensor utilising a Ti/TiN/Pt/Au electrode is presented for improving the thermal stability of ohmic contacts, which can work stably at high temperatures of up to 500°C. To analyse the characteristics of the electrode at high temperatures, a special test structure is measured using the linear transmission line method and Auger electron spectroscopy. To solve the measurement problem, a novel calibration setup is designed to calibrate the absolute pressure sensor at extremely high temperatures. The measurement results have shown that the pressure sensor has a nonlinearity error of 0.17%FS and a sensitivity of 0.24 mV/kPa with a measurement range of 30–150 kPa at 500°C, indicating the good thermal stability of the ohmic contacts.