Silicon on insulator pressure sensor based on a thermostable electrode for high temperature applications. (1st October 2015) - Liu, G.D.
Abstract : A high temperature silicon on insulator pressure sensor utilising a Ti/TiN/Pt/Au electrode is presented for improving the thermal stability of ohmic contacts, which can work stably at high temperatures of up to 500°C. To analyse the characteristics of the electrode at high temperatures, a special test structure is measured using the linear transmission line method and Auger electron spectroscopy. To solve the measurement problem, a novel calibration setup is designed to calibrate the absolute pressure sensor at extremely high temperatures. The measurement results have shown that the pressure sensor has a nonlinearity error of 0.17%FS and a sensitivity of 0.24 mV/kPa with a measurement range of 30–150 kPa at 500°C, indicating the good thermal stability of the ohmic contacts.