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HARVARD Citation
Pham, T. et al. (2015). Si‐based Ge0.9Sn0.1 photodetector with peak responsivity of 2.85 A/W and longwave cutoff at 2.4 μm. Electronics letters. 51 (11), pp. 854-856. [Online].
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Pham, T. et al. (2015). Si‐based Ge0.9Sn0.1 photodetector with peak responsivity of 2.85 A/W and longwave cutoff at 2.4 μm. Electronics letters. 51 (11), pp. 854-856. [Online].