Si‐based Ge0.9Sn0.1 photodetector with peak responsivity of 2.85 A/W and longwave cutoff at 2.4 μm. Issue 11 (1st May 2015)

• Record Type: Journal Article
• Authors: Pham, T.N.; Du, W.; Conley, B.R.; Margetis, J.; Sun, G.; Soref, R.A.; Tolle, J.; Li, B.; Yu, S.‐Q.
• Is Part Of: Electronics letters. Volume 51:Issue 11(2015)
• Page Start: 854
• Page End: 856
• Publication Date: 2015-05-01
• Subjects: infrared detectors -- photodetectors -- CMOS integrated circuits -- silicon -- germanium compounds; photodetector -- photoconductive infrared detectors -- complementary metal oxide semiconductor CMOS process -- temperature dependent study -- wavelength 2.4 mum -- wavelength 2.2 mum -- temperature 300 K -- temperature 77 K -- temperature 293 K to 298 K -- Si‐Ge0.9Sn0.1; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2015.0331
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : High performance Si‐based Ge0.9 Sn0.1 photoconductive infrared detectors have been demonstrated. The device fabrication is fully compatible with the complementary metal‐oxide‐semiconductor (CMOS) process. The room temperature responsivity at 1.55 μm is 0.26 A/W and comparable with that of commercially available InGaAs and Ge photovoltaic detectors. Temperature‐dependent study shows an increased peak responsivity of 2.85 A/W at 77 K. The spectral response has a longwave cutoff of 2.4 and 2.2 μm at 300 and 77 K, respectively. Specific detectivity (D*) was calculated and compared side by side with D* of market dominating infrared detectors.