Cite
MLA Citation
H.S. Han et al.. “Potential of MISFET with HfN gate dielectric formed by ECR plasma sputtering.” Electronics letters, vol. 49, no. 7, 2013, pp. 500–501. http://access.bl.uk/ark:/81055/vdc_100124349189.0x000040
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H.S. Han et al.. “Potential of MISFET with HfN gate dielectric formed by ECR plasma sputtering.” Electronics letters, vol. 49, no. 7, 2013, pp. 500–501. http://access.bl.uk/ark:/81055/vdc_100124349189.0x000040