Cite
HARVARD Citation
Han, H. et al. (2013). Potential of MISFET with HfN gate dielectric formed by ECR plasma sputtering. Electronics letters. 49 (7), pp. 500-501. [Online].
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Han, H. et al. (2013). Potential of MISFET with HfN gate dielectric formed by ECR plasma sputtering. Electronics letters. 49 (7), pp. 500-501. [Online].