Cite
MLA Citation
Jing Zhu et al.. “Bipolar gate drive integrated circuit for insulated gate bipolar transistor to achieve better tradeoff between the turn‐off losses and collector voltage overshoot.” IET circuits, devices & systems, vol. 10, no. 5, 2016, pp. 410–416. http://access.bl.uk/ark:/81055/vdc_100124815194.0x000030