Cite
HARVARD Citation
Kaur, J. et al. (2016). Impact of source/drain doping concentration on graphene nanoribbon field effect transistor performance. IET circuits, devices & systems. 10 (6), pp. 457-462. [Online].
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Kaur, J. et al. (2016). Impact of source/drain doping concentration on graphene nanoribbon field effect transistor performance. IET circuits, devices & systems. 10 (6), pp. 457-462. [Online].