Impact of source/drain doping concentration on graphene nanoribbon field effect transistor performance. Issue 6 (1st November 2016)

• Record Type: Journal Article
• Authors: Kaur, Jasleen; Kumari, Anita
• Is Part Of: IET circuits, devices & systems. Volume 10:Issue 6(2016)
• Page Start: 457
• Page End: 462
• Publication Date: 2016-11-01
• Subjects: nanoribbons -- graphene devices -- field effect transistors -- graphene -- semiconductor doping -- tunnelling -- Green's function methods -- Poisson equation -- electrostatics; source-drain doping concentration -- graphene nanoribbon field effect transistor -- next-generation device -- S-D doping concentration -- band-to-band tunnelling -- minimum conductivity point -- Dirac point -- nonequilibrium Green function formalism -- pz orbital band model -- Poisson equation solver -- electrostatic potential calculation -- C; Electronic circuits -- Periodicals; Electronic systems -- Periodicals; 621.381505
• DOI: 10.1049/iet-cds.2016.0094
• Languages: English
• ISSNs: 1751-858X

Abstract

Abstract : Graphene nanoribbon field effect transistor is considered as a next‐generation device. In this study, effect on device performance parameters such as on and off state currents, cut‐off frequency, delay and transconductance at different source and drain (S/D) doping concentrations is investigated. It is observed that changing the S/D doping concentrations has an impact on band‐to‐band tunnelling which affects the device performance. This study also reveals that the minimum conductivity point, i.e. Dirac point decreases with increase in doping concentration. The obtained results are based on non‐equilibrium Green's function formalism, along with pz orbital band model. Poisson's equation solver is used to calculate the electrostatic potential. The results obtained show that the device performance greatly depends on the S/D doping concentration.