Modeling organic thin-film transistors based on the virtual source concept: A case study. (November 2019)

• Record Type: Journal Article
• Authors: Lima, Alex Anderson; Blawid, Stefan
• Is Part Of: Solid-state electronics. Volume 161(2019)
• Publication Date: 2019-11
• Subjects: Organic thin-film transistor -- Compact model -- Virtual source -- Emission-diffusion theory; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2019.107639
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: A novel compact DC model of organic thin-film transistors is suggested. Diffusive charge emission from a virtual source is a suitable concept for TFT modeling. Charge trapping has a similar effect as a gate bias dependent mobility. A pronounced linear output curve at low drain bias points to a large serial resistance. DC characteristics of OTFTs yield informations about the carrier mean free path. Abstract: We apply the virtual source concept to describe the DC current-voltage characteristics of organic thin-film transistors. The draining of charge carriers from the virtual source is calculated using emission-diffusion theory. The electrical characteristics of organic thin-film transistors are commonly analyzed employing a drift mobility that is enhanced by the transistor overdrive. One possible origin of such a mobility model is charge trapping. We show that the direct parametrization of the fraction of mobile to total charges including trapped ones allows for a straight forward adaptation of the virtual-source emission-diffusion theory to organic electronics capable of describing measured transfer and output curves with a small number of parameters. The resulting model offers an alternative parametrization of well-known bias and temperature dependences. Beyond others, a limited charge injection does not arise from the high-field bulk saturation velocity but from the unidirectional thermal velocity and the charge carrier mean free path is a critical model parameter. Moreover, diffusivity replaces the drift mobility as the current scaling factor, which would lead to slightly different predictions for the current-voltage curves in the case that the Einstein relation is not valid.