71% PAE C‐band GaN power amplifier using harmonic tuning technology. Issue 17 (1st August 2014) - Lu, Yang
Abstract : A high‐efficiency C‐band internally matched power amplifier, developed with 12 mm AlGaN/GaN high‐electron mobility transistors is described. The second‐harmonic frequency (2 f 0 ) tuning network is applied to confine the impedance at 2 f 0 in safe efficiency regions. The packaged power amplifier achieves 71% power‐added efficiency (PAE) and 102 W output power, associated with 17 dB power gain. The PAE is believed to be the highest of the C‐band GaN power amplifiers reported to date.