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HARVARD Citation
Kim, T. et al. (2016). High‐frequency characteristics of Lg = 60 nm InGaAs MOS high‐electron‐mobility‐transistor (MOS‐HEMT) with Al2O3 gate insulator. Electronics letters. 52 (10), pp. 870-872. [Online].
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Kim, T. et al. (2016). High‐frequency characteristics of Lg = 60 nm InGaAs MOS high‐electron‐mobility‐transistor (MOS‐HEMT) with Al2O3 gate insulator. Electronics letters. 52 (10), pp. 870-872. [Online].