High‐frequency characteristics of Lg = 60 nm InGaAs MOS high‐electron‐mobility‐transistor (MOS‐HEMT) with Al2O3 gate insulator. Issue 10 (1st May 2016)

• Record Type: Journal Article
• Authors: Kim, T.‐W.; Kim, J.S.; Kim, D.‐K.; Shin, S.H.; Park, W.‐S.; Banerjee, S.; Kim, D.‐H.
• Is Part Of: Electronics letters. Volume 52:Issue 10(2016)
• Page Start: 870
• Page End: 872
• Publication Date: 2016-05-01
• Subjects: high electron mobility transistors -- MOSFET -- atomic layer deposition -- aluminium compounds -- indium compounds -- gallium arsenide -- millimetre wave field effect transistors -- III‐V semiconductors; Al2O3 -- In0.7Ga0.3As -- voltage 0.5 V -- size 3 nm -- size 60 nm -- high‐performance logic applications -- low‐noise logic applications -- high frequency logic applications -- buried‐channel design -- buried‐channel indium gallium arsenide -- drain induced barrier lowering -- atomic layer deposition -- aluminium oxide -- gate insulator -- MOS‐HEMT -- MOS high electron mobility transistor -- high‐frequency characteristics; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2015.3573
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : High‐frequency characteristics of L g = 60 nm In0.7 Ga0.3 As MOS‐high‐electron‐mobility transistor (HEMTs) with a 3 nm aluminium oxide grown by atomic‐layer‐deposition is reported. Fabricated In0.7 Ga0.3 As MOS‐HEMTs with L g = 60 nm exhibit subthreshold‐swing (SS) = 89 mV/dec., drain‐induced‐barrier‐lowering = 98 mV/V, g m_max = 1.1 mS/μm, f T = 187 GHz and f max = 202 GHz at V DS = 0.5 V. The high‐frequency characteristics showed is the best balanced demonstration of f T and f max in the buried‐channel indium gallium arsenide MOS‐HEMTs, revealing a strong potential of the buried‐channel design scheme for future high frequency, low‐noise and high‐performance logic applications.