Cite
MLA Citation
Zhe Xu et al.. “200°C normally off AlGaN/GaN MISFET with 321 mA/mm drain current density and 1055 V breakdown voltage.” Electronics letters, vol. 55, no. 5, 2019, pp. 282–283. http://access.bl.uk/ark:/81055/vdc_100124831018.0x00002c