Cite
HARVARD Citation
Xu, Z. et al. (2019). 200°C normally off AlGaN/GaN MISFET with 321 mA/mm drain current density and 1055 V breakdown voltage. Electronics letters. 55 (5), pp. 282-283. [Online].
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Xu, Z. et al. (2019). 200°C normally off AlGaN/GaN MISFET with 321 mA/mm drain current density and 1055 V breakdown voltage. Electronics letters. 55 (5), pp. 282-283. [Online].