Cite
HARVARD Citation
Fuchs, C. et al. (2016). Electrical injection type‐II (GaIn)As/Ga(AsSb)/(GaIn)As single 'W'‐quantum well laser at 1.2 µm. Electronics letters. 52 (22), pp. 1875-1877. [Online].
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Fuchs, C. et al. (2016). Electrical injection type‐II (GaIn)As/Ga(AsSb)/(GaIn)As single 'W'‐quantum well laser at 1.2 µm. Electronics letters. 52 (22), pp. 1875-1877. [Online].