Electrical injection type‐II (GaIn)As/Ga(AsSb)/(GaIn)As single 'W'‐quantum well laser at 1.2 µm. Issue 22 (11th October 2016)

• Record Type: Journal Article
• Authors: Fuchs, C.; Berger, C.; Möller, C.; Weseloh, M.; Reinhard, S.; Hader, J.; Moloney, J.V.; Koch, S.W.; Stolz, W.
• Is Part Of: Electronics letters. Volume 52:Issue 22(2016)
• Page Start: 1875
• Page End: 1877
• Publication Date: 2016-10-11
• Subjects: gallium compounds -- indium compounds -- arsenic compounds -- III‐V semiconductors -- quantum well lasers -- optical design techniques -- vapour phase epitaxial growth -- MOCVD -- electroluminescence -- spectral line shift -- carrier density -- laser beams -- optical losses -- laser cavity resonators; GaInAs‐GaAsSb‐GaInAs -- wavelength 1.2 mum -- threshold current density -- cavity length -- internal losses -- optical output powers -- differential efficiencies -- charge carrier density -- blue shift -- broad‐area laser -- electroluminescence -- metal organic vapour phase epitaxy -- laser design -- electrical injection type‐II single W‐quantum well laser; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2016.2851
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : Highly efficient interface‐dominated electrical injection lasers in the near‐infrared regime based on the type‐II band alignment in (GaIn)As/Ga(AsSb)/(GaIn)As single 'W'‐quantum wells are realised. The structure is designed by applying a fully microscopic theory, grown by metal organic vapour phase epitaxy, and characterised using electroluminescence measurements and broad‐area laser studies. A characteristic blue shift of 93 meV/(kA/cm 2 ) with increasing charge carrier density is observed and compared with theoretical investigations. Low threshold current densities of 0.4 kA/cm 2, high differential efficiencies of 66%, optical output powers of 1.4 W per facet, and internal losses of only 1.9 cm −1 are observed at a wavelength of 1164 nm for a cavity length of 930 µm. For a cavity length of 2070 µm, the threshold current density is reduced to 0.1 kA/cm 2 . No indication for type‐I related transitions for current densities up to 4.6 kA/cm 2 is observed.