Cite
HARVARD Citation
Herbecq, N. et al. (2015). GaN‐on‐silicon high electron mobility transistors with blocking voltage of 3 kV. Electronics letters. 51 (19), pp. 1532-1534. [Online].
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Herbecq, N. et al. (2015). GaN‐on‐silicon high electron mobility transistors with blocking voltage of 3 kV. Electronics letters. 51 (19), pp. 1532-1534. [Online].