GaN‐on‐silicon high electron mobility transistors with blocking voltage of 3 kV. Issue 19 (4th September 2015)

• Record Type: Journal Article
• Authors: Herbecq, N.; Roch‐Jeune, I.; Linge, A.; Grimbert, B.; Zegaoui, M.; Medjdoub, F.
• Is Part Of: Electronics letters. Volume 51:Issue 19(2015)
• Page Start: 1532
• Page End: 1534
• Publication Date: 2015-09-04
• Subjects: aluminium compounds -- gallium compounds -- III‐V semiconductors -- wide band gap semiconductors -- silicon -- high electron mobility transistors -- electric breakdown; high electron mobility transistors -- GaN‐on‐silicon -- blocking voltage -- three‐terminal breakdown voltage -- AlGaN‐GaN HEMT -- Si (111) substrate -- local substrate removal -- parasitic substrate conduction -- lateral power devices -- size 5.5 mum -- voltage 3 kV -- GaN‐Si -- AlGaN‐GaN; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2015.1684
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : A three‐terminal breakdown voltage over 3 kV is reported on AlGaN/GaN high‐electron‐mobility transistors (HEMTs) grown on silicon (Si) (111) substrate with a buffer thickness of 5.5 µm. The breakdown voltage of the 1.5 × 50 μm 2 devices has been improved by more than 200% by applying a local substrate removal all around the drain of the transistors in order to suppress the parasitic substrate conduction phenomenon. This establishes a new record breakdown voltage for GaN‐on‐silicon lateral power devices while maintaining a low specific on‐resistance of about 10 mΩ · cm 2 .