Cite
HARVARD Citation
Hu, S. et al. (2013). SOI high‐voltage LDMOS with novel triple‐layer top silicon based on thin BOX. Electronics letters. 49 (3), pp. 223-225. [Online].
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Hu, S. et al. (2013). SOI high‐voltage LDMOS with novel triple‐layer top silicon based on thin BOX. Electronics letters. 49 (3), pp. 223-225. [Online].