Measuring strain caused by ion implantation in GaN. (1st August 2019)

• Record Type: Journal Article
• Authors: Mendes, P.; Lorenz, K.; Alves, E.; Schwaiger, S.; Scholz, F.; Magalhães, S.
• Is Part Of: Materials science in semiconductor processing. Volume 98(2019)
• Page Start: 95
• Page End: 99
• Publication Date: 2019-08-01
• Subjects: Gallium nitride -- Implantation -- Ion channeling -- X-ray diffraction -- Strain; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2019.04.001
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: The reaction of GaN to ion implantation was studied in thin films grown on the a-plane (non-polar) and on the c-plane (polar). 300 keV argon ions were implanted at room temperature to fluences ranging from 5 × 10 12 atoms/cm 2 to 8 × 10 15 atoms/cm 2 . The structural analysis was performed using Rutherford Backscattering/Channeling and X-Ray Diffraction. The results allow to reinforce the suggestion that perpendicular strain caused by ion implantation is the driving force behind defect transformation processes inside the lattice. Furthermore, they confirm a lower relative damage level for a-plane GaN implanted with the highest fluence, in comparison with c-plane GaN, as reported previously for low temperature implantation.